c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . SBN13001 SBN13001 SBN13001 SBN13001 rev.a aug.2010 high voltage fast-switching npn power transistor features ? very high switching speed ? high voltage capability ? wide reverse bias soa general description this device is designed for high voltage, high speed switching characteristics required such as lighting system, switching mode power supply. absolute maximum ratings symbol parameter test conditions value units v ces collect-emitter voltage v be =0 600 v v ceo collector-emitter voltage i b =0 400 v v ebo emitter-base voltage i c =0 9.0 v i c collector current 0.5 a i cp collector pulse current 1.0 a i b base current - a i bm base peak current t p =5ms - a p c total dissipation at tc*=25 8 w total dissipation at ta*=25 0.6 t j operation junction temperature -40~150 t stg storage temperature -40~150 tc: case temperature (good cooling) ta: ambient temperature (without heat sink)
SBN13001 SBN13001 SBN13001 SBN13001 2 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance electrical characteristics (t c =25 unless otherwise noted) symbol parameter test conditions value units min typ max bv cbo collector-base breakdown voltage ic=0.5ma,ie=0 600 v bv ceo collector-emitter breakdown voltage ic=10ma,ib=0 400 - - v v ce(sat) collector -emitter saturation voltage ic=200ma,ib=100ma - - 1.6 v v be(sat) base -emitter saturation voltage ic=200ma,ib=100ma - - 1.2 v i cbo collector -base cutoff current vcb=550v,ie=0ma - - 10 a i ceo collector -emitter cutoff current vce=400v,ib=0ma - - 20 a i ebo emitter -base cutoff current veb=9v,ic=0ma - - 20 a hfe dc current gain vce=20v,ic=20ma vce=5v,ic=1ma 10 9 - - 40 - ts tf storage time fall time v cc =250v i c =5 i b i b1 =-i b2 =0.04a 2 - - - - 0.8 s note: pulse test: pulse width 300,duty cycle 2%
SBN13001 SBN13001 SBN13001 SBN13001 3 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.1 dc current gain fig.2 saturation voltage fig.3 power derating fig.4 safe operation area fig.5 static characteristics
SBN13001 SBN13001 SBN13001 SBN13001 4 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance inductive load switching & rbsoa test circuit inductive load switching &rbsoa test circuit
SBN13001 SBN13001 SBN13001 SBN13001 5 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance to-92 to-92 to-92 to-92 package package package package dimension dimension dimension dimension dim mm inch min. typ. max. min. typ. max. a 4.2 0.165 b 3.7 0.146 c 4.43 4.83 0.174 0.190 d 14.07 14.87 0.554 0.585 e 0.4 0.016 f 4.43 4.83 0.174 0.190 g 0.45 0.017 h 1.27 0.050 i 1.27 0.050 j 0.33 0.48 0.013 0.019
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